Single Bipolar Transistors

Results: 2
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
800 mA1 A
Voltage - Collector Emitter Breakdown (Max)
40 V60 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)20nA (ICBO)
Frequency - Transition
200MHz300MHz
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
PN2222ABU
TRANS NPN 40V 1A TO92-3
onsemi
6,535
In Stock
1 : ¥3.28000
Bulk
-
Bulk
Active
NPN
1 A
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
PN2907ABU
TRANS PNP 60V 0.8A TO92-3
onsemi
30,254
In Stock
20,000
Factory
1 : ¥2.79000
Bulk
-
Bulk
Active
PNP
800 mA
60 V
1.6V @ 50mA, 500mA
20nA (ICBO)
100 @ 150mA, 10V
625 mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.