Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-CoolMOS™ G7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V600 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)75A (Tc)
Rds On (Max) @ Id, Vgs
28mOhm @ 28.8A, 10V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA4V @ 1.44mA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V4820 pF @ 400 V
Power Dissipation (Max)
200mW (Ta)391W (Tc)
Supplier Device Package
PG-HSOF-8-2SOT-323
Package / Case
8-PowerSFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
736,486
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40361
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
PG-HSOF-8-2
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
Infineon Technologies
4,433
In Stock
1 : ¥112.88000
Cut Tape (CT)
2,000 : ¥66.51140
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
75A (Tc)
10V
28mOhm @ 28.8A, 10V
4V @ 1.44mA
123 nC @ 10 V
±20V
4820 pF @ 400 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.