Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta)18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 20A, 10V4.4mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 15 V3100 pF @ 30 V
Power Dissipation (Max)
2.1W (Ta)2.1W (Ta), 69W (Tc)
Supplier Device Package
PG-TSDSON-8-34PG-TSDSON-8-FL
Package / Case
8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ0589NSATMA1
MOSFET N-CH 30V 17A TSDSON
Infineon Technologies
9,792
In Stock
1 : ¥7.47000
Cut Tape (CT)
5,000 : ¥2.93093
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
17A (Ta)
4.5V, 10V
4.4mOhm @ 8A, 10V
2V @ 250µA
15 nC @ 10 V
±20V
950 pF @ 15 V
-
2.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TSDSON-8
BSZ037N06LS5ATMA1
MOSFET N-CH 60V 18A/40A TSDSON
Infineon Technologies
9,595
In Stock
1 : ¥13.38000
Cut Tape (CT)
5,000 : ¥5.35690
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta), 40A (Tc)
4.5V, 10V
3.7mOhm @ 20A, 10V
2.3V @ 36µA
47 nC @ 10 V
±20V
3100 pF @ 30 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-34
8-PowerVDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.