Single FETs, MOSFETs

Results: 4
Manufacturer
onsemiSTMicroelectronicsToshiba Semiconductor and Storage
Series
-STripFET™ H6U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)6A (Tc)9A (Tc)10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
15mOhm @ 4.5A, 10V20mOhm @ 4A, 10V30mOhm @ 3A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)2.2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V20.4 nC @ 4.5 V24 nC @ 4.5 V
Vgs (Max)
+20V, -25V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V1150 pF @ 15 V1450 pF @ 25 V2615 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)1.25W (Ta)2.9W (Tc)3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-UDFNB (2x2)PowerFlat™ (3.3x3.3)SOT-23-3
Package / Case
6-WDFN Exposed Pad8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
80,965
In Stock
30,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8PowerVDFN
STL6P3LLH6
MOSFET P-CH 30V 6A POWERFLAT
STMicroelectronics
11,257
In Stock
1 : ¥9.28000
Cut Tape (CT)
3,000 : ¥3.84036
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Tc)
4.5V, 10V
30mOhm @ 3A, 10V
1V @ 250µA (Min)
12 nC @ 4.5 V
±20V
1450 pF @ 25 V
-
2.9W (Tc)
150°C (TJ)
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
39,005
In Stock
1 : ¥5.75000
Cut Tape (CT)
3,000 : ¥1.33130
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10A (Ta)
4V, 10V
20mOhm @ 4A, 10V
2.2V @ 250µA
20.4 nC @ 4.5 V
+20V, -25V
1150 pF @ 15 V
-
1.25W (Ta)
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
8-PowerFlat
STL9P3LLH6
MOSFET P-CH 30V 9A POWERFLAT
STMicroelectronics
79,637
In Stock
1 : ¥8.54000
Cut Tape (CT)
3,000 : ¥3.51776
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
9A (Tc)
4.5V, 10V
15mOhm @ 4.5A, 10V
1V @ 250µA (Min)
24 nC @ 4.5 V
±20V
2615 pF @ 25 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.