Single IGBTs

Results: 3
Manufacturer
Microchip Technologyonsemi
Series
-Thunderbolt IGBT®
Product Status
ActiveObsolete
Current - Collector (Ic) (Max)
43 A54 A64 A
Current - Collector Pulsed (Icm)
75 A80 A160 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 11A3.2V @ 15V, 40A3.7V @ 15V, 25A
Power - Max
298 W347 W500 W
Switching Energy
930µJ (on), 720µJ (off)950µJ (on), 1.3mJ (off)2.3mJ (on), 1.1mJ (off)
Gate Charge
100 nC170 nC220 nC
Td (on/off) @ 25°C
14ns/150ns15ns/110ns23ns/180ns
Test Condition
600V, 40A, 5Ohm, 15V800V, 25A, 5Ohm, 15V960V, 11A, 10Ohm, 15V
Reverse Recovery Time (trr)
70 ns112 ns
Package / Case
TO-247-3TO-264-3, TO-264AA
Supplier Device Package
TO-247 [B]TO-247-3TO-264-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-247-3-PKG-Series
APT25GT120BRG
IGBT NPT 1200V 54A TO247
Microchip Technology
1,475
In Stock
1 : ¥53.44000
Tube
Tube
Active
NPT
1200 V
54 A
75 A
3.7V @ 15V, 25A
347 W
930µJ (on), 720µJ (off)
Standard
170 nC
14ns/150ns
800V, 25A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
TO-247-3 AB EP
HGTG11N120CND
IGBT NPT 1200V 43A TO247-3
onsemi
450
In Stock
1 : ¥44.99000
Tube
-
Tube
Obsolete
NPT
1200 V
43 A
80 A
2.4V @ 15V, 11A
298 W
950µJ (on), 1.3mJ (off)
Standard
100 nC
23ns/180ns
960V, 11A, 10Ohm, 15V
70 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-264-3, TO-264AA
FGL40N120ANDTU
IGBT NPT 1200V 64A TO264-3
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
NPT
1200 V
64 A
160 A
3.2V @ 15V, 40A
500 W
2.3mJ (on), 1.1mJ (off)
Standard
220 nC
15ns/110ns
600V, 40A, 5Ohm, 15V
112 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264-3
Showing
of 3

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.