Single FETs, MOSFETs

Results: 3
Drain to Source Voltage (Vdss)
300 V500 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)70A (Tc)100A (Tc)
Rds On (Max) @ Id, Vgs
49mOhm @ 50A, 10V54mOhm @ 35A, 10V154mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
6.5V @ 4mA6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 10 V98 nC @ 10 V255 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
4735 pF @ 25 V4800 pF @ 25 V13800 pF @ 25 V
Power Dissipation (Max)
300W (Tc)830W (Tc)1560W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
ISOPLUS247™PLUS264™TO-268AA
Package / Case
TO-247-3TO-264-3, TO-264AATO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package
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FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-ISOPLUS-EP-(R)
IXFR44N50Q3
MOSFET N-CH 500V 25A ISOPLUS247
IXYS
27
In Stock
1 : ¥195.39000
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MOSFET (Metal Oxide)
500 V
25A (Tc)
10V
154mOhm @ 22A, 10V
6.5V @ 4mA
93 nC @ 10 V
±30V
4800 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247™
TO-247-3
TO-264
IXFB100N50Q3
MOSFET N-CH 500V 100A PLUS264
IXYS
11
In Stock
1 : ¥343.25000
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N-Channel
MOSFET (Metal Oxide)
500 V
100A (Tc)
10V
49mOhm @ 50A, 10V
6.5V @ 8mA
255 nC @ 10 V
±30V
13800 pF @ 25 V
-
1560W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS264™
TO-264-3, TO-264AA
TO-268
IXFT70N30Q3
MOSFET N-CH 300V 70A TO268
IXYS
0
In Stock
Check Lead Time
1 : ¥170.60000
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N-Channel
MOSFET (Metal Oxide)
300 V
70A (Tc)
10V
54mOhm @ 35A, 10V
6.5V @ 4mA
98 nC @ 10 V
±20V
4735 pF @ 25 V
-
830W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.