The TW070J120B silicon carbide MOSFET, from Toshiba, is a power device featuring a low R-DS-On of 70 milliohms.
Introduction to Omron's MOS FET Relays, the G3VM series, and a showcase of the comparisons between MOS FET relays and mechanical relays.
In this episode, you will learn how Omron’s MOS FET modules can be a best fit for your applications.
Omron’s G3VM-66M MOSFET relay modules are SPDT relays that reduce design time, shrink design footprint, and provide a long, maintenance free operating life.
G3VM-21MT is the first electronic component in the world*2 to adopt a "T-type circuit structure"*3. It allows high-precision measurement and improves productivity of electronic components.
This quality, reliability and lifetime testing presentation is part one of Transphorm's four part GaN FET video series
This video is the high level introduction comparison of Transphorm's GaN FET technology against current e-mode technology in the market.
In this webinar, we will talk about the various characteristics of MOSFETs and how the technology they are developed in plays a role in their suitability for different applications.
Texas Instruments' LMG1210 is a 200 V, half-bridge MOSFET and gallium nitride field-effect transistor driver designed for ultra-high frequency, high-efficiency applications.
In this quick learning session we review a typical Nexperia GaN FET datasheet, and explore the key values and tolerances for consideration.
Discusses the differences between Transphorm's GaN FET and today's e mode technology
There is a myth that Transphorm's GaN FET is not slew-rate controllable. This presentation will cancel this myth.
The Texas Instruments MCF8316 A is a single-chip, code-free, sensorless, Field Oriented Control solution for customers driving speed-controlled 12 to 24 volt brushless DC motors or Permanent Magnet Synchronous motors with up to 8 amps peak current.
德州仪器公司为您提供LMG1210,这是一款200伏半桥金属氧化物半导体场效应晶体管和氮化镓场效应晶体管驱动器。它专为超高频、高效率应用而设计,具有可调死区能力、超小传播延迟和3.4纳秒的高端到低端匹配,以优化系统效率。
Transphorm's elimination of a Kelvin source connection for its GaN FETs
Motor Control typical topology, advantages of GaN FET versus Silicon MOSFET.
Power GaN FET devices can bring multiple benefits to power electronic converters, join Ilian as he compares traditional Silicon-based converters to a GaN-based converter, highlighting the key benefits Power GaN FETs bring to your system.
Leaning on Nexperia's expertise in copper clip technology, Ding Yandoc (Package Architect and Technical Manager) explains all you need to know about CCPAK and why it is the logical next step in high-voltage power FET packaging.
Introducing the Si82Fx isolated gate driver solutions for various power switches! This family features the SelVCDTM current mode architecture, CMOS inputs, dual channels & multiple UVLOs. It's perfect for your isolated gate drive needs.