《得捷时刻》视频系列,Digi-Key与多位供应商专家和电子工程师大咖访谈中,带出多个业内热门话题与前沿技术发展。本视频嘉宾:TE Connectivity 高级应用工程师—杨承澄,EPC中国区销售总监—张昇强,优秀创客及创业者—隰佳杰
Uboxing an EPC GaN Motor Drive Kit, for Engineers and Power Electronics markets. Exploring the benefits and overall features using motor drive and leveraging the high efficiency and performance of GaN.
In this webinar you’ll have an introduction to GaN technology and its advantages in common DC-DC converter topologies including a synchronous rectifier and a buck converter, an in-depth exploration of the test-to-fail methodology.
In this webinar you’ll have an introduction to GaN technology and its advantages in space applications, an in-depth exploration of the test-to-fail methodology and its applicability in accurately forecasting the projected lifetime of GaN FETs.
In this webinar you’ll have an introduction to GaN technology and its benefits in solar applications, understanding the test-to-fail methodology and its relevance in predicting device reliability.
As the proliferation of portable devices and consumers dependency on those devices grows, the demand for portable and always available power has increased exponentially. Power banks supply power to portable devices such as smartphones and tablets.
Motor Control typical topology, advantages of GaN FET versus Silicon MOSFET.
This webinar covers how GaN-based USB PD fast chargers can be up to 40% smaller and charge 2.5x faster than traditional silicon-based chargers.
This webinar covers how Gallium Nitride devices deliver double the power density over silicon MOSFETs, require no heatsink, and provide easier output stage scaling for high-power (greater than 100 W/channel) audio applications.
Gallium nitride (GaN) FETs and ICs are being widely adopted for solar applications because they offer significant benefits for efficiency, size, weight, and long lifetime.
Watch the on-demand webinar to learn Easy Design Tips to Maximize Performance and Reliability in Your GaN Designs.
Watch the on-demand webinar to learn how to harness the power of enhancement-mode gallium nitride (eGaN) FETs and ICs for motor drives.
Kaili Simpson, Associate Electronics Technician at DigiKey, presents New Product Discoveries.
Material comparisons of Gallium Nitride (GaN), Silicon (Si) and Silicon Carbide (SiC).
Describes how Gallium Nitride (GaN) transistors are built. Selecting substrate material, growing the heteroepitaxy, processing the wafer, making electrical connection to the outside world.
Key electrical parameters and ratings for power electronics system designers.
How to drive a GaN transistor to achieve maximum performance.
Basics of GaN design layout. Optimal layout techniques.
This video will show how heat extraction from a small GaN transistor or integrated circuit, with a good thermal design, can be as effective as from a bulky silicon MOSFET.