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Advantages of AIN Over AI2O3

Looking at the typical contribution of each layer in a baseplate-less module to the overall junction to heatsink thermal resistance, an overwhelming majority comes from the thermal interface material and DBC substrate. To push the performance over the standard alumina stack-up, move to the thermally-enhanced aluminum nitride substrate and a higher performing thermal interface material. What the designer will get is a significantly higher performing stack-up with a relatively low cost increase. With seven times higher thermal conductivity over alumina, the designer is able to reduce the thermal resistance of each GM3 RDS(on) variant by over 50%. Going from 0.363 to 0.174°C/W for the 8 mΩ, and from 0.295 down to 0.137°C/W for the 6 mΩ. This allows a lower junction temperature and enhances power cycling lifetime for a given loss, enables a higher heatsink temperature which would result in a system cost reduction, or like the designer just discussed throughout the simulation study, the customer ultimately gets higher utilization of the SiC device's performance.

PTM Published on: 2022-04-12