The VOMDA1271T integrates an infrared emitter, a detector chip consisting of multiple photovoltaic cells, and circuitry to reduce the turn-off time. The emitter and the detector are galvanically isolated by a transparent epoxy. When there is a forward current to the emitter, it emits infrared light. This light travels through the isolation barrier to the detector. The detector chip generates a voltage which is used to drive the gate of a MOSFET.