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Trench MOS Barrier Schottky Rectifiers Slide 9

The test results in this table demonstrate that the 200 V TMBS rectifier provides the lowest on-state voltage drop compared to the industry’s benchmark 200 V planar Schottky rectifiers and 200 V ultrafast p-n junction diodes. This comparison underscores the switching advantages of the TMBS rectifier. In addition, the stored charge is half of the industry’s benchmark devices and the peak switching reverse recovery current is 34% lower. The lower reverse recovery current decreases switching losses and improves power conversion efficiency, particularly in designs with switching frequencies above 300 kHz.

PTM Published on: 2011-11-08