VIPerPlus devices use a system-in-package technology which includes two separate pieces of silicon, each using the process best suited for its use. The control section uses STMicroelectronics’ 0.35 micron, BCD6 and BCD6S mixed bipolar, CMOS and DMOS processes. This high density lithography features final-test digital trimming capabilities for a tighter tolerance on parameters and allows different functionalities to be selected. For example, overvoltage protection can be configured as latched or auto-recovery. The power section is a dedicated SuperMESH technology MOSFET with breakdown voltage guaranteed up to 900V. Additional capabilities include high-voltage start-up, 60V undervoltage lock-out, and hysteretic thermal shutdown. Note that temperature sensing is located in the power section, and not in the control section as is commonly found. The two silicon dies of a VIPerPlus device are mounted on a package frame containing two physically-isolated die pads. The control side shown on the left is grounded and the power section on the right is floating. This flexible packaging approach allows us to rapidly enlarge the product family in terms of functionalities, topologies, and power capabilities. VIPerPlus devices are available in surface mount and through-hole packages, supporting applications up to 10W, with a future extension of the family up to 40W.