ST’s BiCMOS technologies are developed based upon standard CMOS technology nodes and then moved into the specialized BiCMOS or SiGe processes. The initial process is a 350-nanometer process, the BiCMOS6 technology, followed by BiCMOS7RF. Most of the RF synthesizers are designed in these processes. BiCMOS7RF is a 250-nanometer process with cutoff frequencies of about 55 GHz and maximum oscillation frequencies of around 70 GHz. There are also newer technologies which have spun off from HCMOS9, 130-nanometer processes that are being used for optical networking devices and such. There is a variant of this process, the BiCMOS9MW, specifically for microwave types of applications where the maximum frequencies of oscillation can reach up to about 280 GHz Fmax for transistors, a very nice technology and in full volume production. ST also has developed and is moving toward volume production of the BiCMOS55, a 55-nanometer BiCMOS technology with significant gains in maximum frequencies. Maximum oscillation frequencies are up to 370 GHz, making this a process that could be very interesting to designers doing some very high frequency work. Because it is a 55-nanometer process, BiCMOS55 can be used with a high level of integration of some digital functions as well, giving the engineer a mixed process that can be used for mixed process ASICs.