ROHM's SiC MOSFET technology evolved through a few generations, from a conventional planar gate design, to the unique trench structure with much better performance. The 3^rd Generation MOSFETs with double-trench structure design reduce the specific ON-state resistance by 50% from planar-type devices. This means with the same chip size, the drain-to-source resistance is reduced by half to enable more efficient conduction operation. The 4^th Generation SiC MOSFET further optimize the trench design and delivers another 40% reduction in ON-state resistance, leading to much lower energy losses and the option to use smaller SiC chips for more cost-effective system designs.