The iCMOS manufacturing process combines high-voltage silicon with submicron CMOS and complementary bipolar technologies. It enables the development of a wide range of high-performance analog ICs capable of 30 V operation in a smaller footprint. iCMOS switches offer ultralow capacitance and charge injection which makes them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling times are required. iCMOS multiplexers demonstrate 3- to -4-ohm On-resistance which is an 85% reduction to the industry standard On-resistance for 15 V multiplexers.