SQJ200EP and SQJ202EP N-Channel TrenchFET® Devices

Vishay introduces the industry’s first AEC-Q101 qualified 12 V and 20 V MOSFETs in a dual asymmetric power package. The Vishay Siliconix SQJ202EP and SQJ200EP N-channel TrenchFET devices each combine a high- and low-side MOSFET in the compact 5 mm by 6 mm PowerPAK® SO-8L dual asymmetric package with low-side maximum on-resistance down to 3.3 mΩ.

By co-packaging two MOSFETs in an asymmetric package, with a larger low-side MOSFET for lower on-resistance and smaller high-side MOSFET for faster switching, the 12 V SQJ202EP and 20 V SQJ200EP provide high-performance alternatives to standard dual devices, which restrict the optimum combination of MOSFETs for high-current, high-frequency synchronous buck designs. Compared to using discrete components, the devices occupy less board space and can facilitate more compact PCB layouts.

The devices offer high-temperature operation to +175°C to provide the ruggedness and reliability required for automotive applications such as infotainment, telematics, navigation, and LED lighting. The SQJ202EP is well suited for applications with bus voltages less than or equal to 8 V and offers extremely low maximum on-resistance down to 3.3 mΩ for the channel 2 low-side MOSFET. For applications with higher bus voltages, the 20 V SQJ200EP features a slightly higher maximum on-resistance of 3.7 mΩ. Both parts are 100% tested for gate resistance and avalanche and they are RoHS-compliant and halogen-free.