Power Bipolar Junction Transistors (BJTs)

DigiKey电子元器件新产品信息 > Power Bipolar Junction Transistors (BJTs)

            Power Bipolar Junction Transistors (BJTs)
                    Nexperia space and energy efficient power BJTs in compact DFN2020D-3 package
    

Image of Nexperia Power Bipolar Junction Transistors (BJTs) Nexperia adds to its popular portfolio of power bipolar junction transistors (BJTs) with the release of ten standard and ten automotive-qualified products in DFN2020D-3 packaging. These devices are available in 50 V and 80 V ratings and support current ranges from 1 A to 3 A in NPN and PNP polarity. Nexperia is offering the majority of its power BJTs in DFN packaging for designers looking for a space- and energy-efficient alternative to older SOT223 and SOT89 packages.

Features

Low collector/emitter saturation voltage (V_CE(SAT))
High collector current capability IC and ICM
High collector current gain (h_FE) at high IC
High efficiency due to less heat generation
Less power consumption due to low internal resistance R_CE(SAT)

+175°C parts available
Reduced printed-circuit board (PCB) area requirements
Leadless small surface-mount plastic package
Parts with solderable side pads available, suitable for automatic optical inspection (AOI) of solder joints for automotive and non-automotive parts

Applications

Linear voltage regulation
Load switches
Battery-driven devices

Power management
Charging circuits
Power switches