IR25750 Current Sensing IC

Infineon Technologies announced the introduction of the robust IR25750 general purpose current sensing IC available in an ultra-compact SOT23-5L package that boosts overall system efficiency while delivering dramatic space savings for high-current applications.

Measuring high currents through a power MOSFET or IGBT typically requires a large resistor which generates excess power losses. By extracting the voltage across the internal R_DS(ON) of a power MOSFET or the V_CE(ON) of an IGBT during the switch’s on-time, the IR25750 eliminates large external current sensing resistors, heatsinks, and excess power losses.

The IR25750’s gate-drive input provides the V_CC supply voltage to the IC and synchronizes the R_DS(ON) or V_CE(ON) sensing circuit to the on and off times of the MOSFET or IGBT. Leveraging Infineon Technologies’ proprietary high-voltage technology, the device also features 600 V blocking capability necessary for blocking high V_DS or V_CE voltages during the switch off-time. Other key features include low gate input capacitance, internal filter delay at turn-on (200 nsec typical) and internal 20.8 V zener clamps on GATE and CS pins.