BLL8Hxx Family RF Power Transistors

Ampleon introduces the BLL8Hxx family of RF power transistors from its 8th generation 50 V LDMOS technology to serve L-band radar applications. The BLL8Hxx family offers excellent broadband operation (1.2-1.4 GHz), and is available in output power levels of 25, 130, 250, and 500 W (P,1 dB). The BLL8Hxx family features integrated dual-sided ESD, internal matching, improved ruggedness, high efficiency (typ. 50%) and excellent thermal stability.

• BLL8H0514-25: 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range
• BLL8H0514L(S)-130: 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range
• BLL8H1214LS-500: 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range
• BLL8H1214L(S)-250: 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range

Features and Benefits

• Easy power control
• Integrated dual-side ESD protection
• High flexibility with respect to pulse formats
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (1.2 GHz to 1.4 GHz)
• Internally matched for ease-of-use
• Compliant to directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

• L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range