43.3A (Tc) Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-CoolMOS™CoolMOS™ CFD2
Packaging
Tape & Reel (TR)Tube
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
60 V650 V700 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
12mOhm @ 20A, 10V80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4.5V @ 1.76mA4.5V @ 1.8mA
Gate Charge (Qg) (Max) @ Vgs
22.2 nC @ 10 V161 nC @ 10 V167 nC @ 10 V170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1522 pF @ 30 V4440 pF @ 100 V5030 pF @ 100 V
Power Dissipation (Max)
1.95W (Ta), 33.78W (Tc)391W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3PG-TO247-3-1PowerDI3333-8 (Type UX)
Package / Case
8-PowerVDFNTO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
AUIRFP4310Z BACK
IPW65R080CFDAFKSA1
MOSFET N-CH 650V 43.3A TO247-3
Infineon Technologies
259
In Stock
1 : ¥92.03000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
43.3A (Tc)
10V
80mOhm @ 17.6A, 10V
4.5V @ 1.76mA
161 nC @ 10 V
±20V
4440 pF @ 100 V
-
391W (Tc)
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3
TO-247-3
PG-TO247-3
IPW65R080CFDFKSA2
MOSFET N-CH 650V 43.3A TO247-3
Infineon Technologies
154
In Stock
1 : ¥76.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
43.3A (Tc)
10V
80mOhm @ 17.6A, 10V
4.5V @ 1.8mA
167 nC @ 10 V
±20V
5030 pF @ 100 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
PowerDI3333-8
DMT6012LFV-13
MOSFET N-CH 60V 43.3A PWRDI3333
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : ¥1.95938
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
43.3A (Tc)
4.5V, 10V
12mOhm @ 20A, 10V
2.5V @ 250µA
22.2 nC @ 10 V
±20V
1522 pF @ 30 V
-
1.95W (Ta), 33.78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
PowerDI3333-8
DMT6012LFV-7
MOSFET N-CH 60V 43.3A PWRDI3333
Diodes Incorporated
0
In Stock
34,000
Factory
Check Lead Time
2,000 : ¥1.95935
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
43.3A (Tc)
4.5V, 10V
12mOhm @ 20A, 10V
2.5V @ 250µA
22.2 nC @ 10 V
±20V
1522 pF @ 30 V
-
1.95W (Ta), 33.78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
PG-TO247-3
IPW65R080CFDFKSA1
MOSFET N-CH 700V 43.3A TO247-3
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
700 V
43.3A (Tc)
10V
80mOhm @ 17.6A, 10V
4.5V @ 1.76mA
170 nC @ 10 V
±20V
5030 pF @ 100 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
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of 5

43.3A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.