Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Renesas Electronics Corporation
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)100A (Tc)
Rds On (Max) @ Id, Vgs
3.3mOhm @ 25A, 10V16.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2754 pF @ 20 V5000 pF @ 10 V
Power Dissipation (Max)
1.2W (Ta), 84W (Tc)117W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)175°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8TO-252 (MP-3ZK)
Package / Case
SC-100, SOT-669TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
17,936
In Stock
1 : ¥18.31000
Cut Tape (CT)
2,500 : ¥8.26015
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
-
16.5mOhm @ 25A, 10V
2.5V @ 250µA
100 nC @ 10 V
-
5000 pF @ 10 V
-
1.2W (Ta), 84W (Tc)
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
LFPAK56/POWER-SO8/SOT669
PSMN3R3-40YS,115
MOSFET N-CH 40V 100A LFPAK56
Nexperia USA Inc.
19,783
In Stock
1 : ¥10.18000
Cut Tape (CT)
1,500 : ¥4.47746
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
3.3mOhm @ 25A, 10V
4V @ 1mA
49 nC @ 10 V
±20V
2754 pF @ 20 V
-
117W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.