VideoLibrary

LMG3410R070 Gallium Nitride Power Stage | First Look

Texas Instrumennts’ LMG3410R070 integrates the 600V, 70mΩ GaN FET, gate driver, and protection functions in an 8mm x 8mm low inductance QFN package that requires only a 12V unregulated supply for operation.

11/12/2020 2:46:11 PM

Part List

图片制造商零件编号描述可供货数量价格查看详情
PWR MGMT MOSFET/PWR DRIVERLMG3410R070RWHTPWR MGMT MOSFET/PWR DRIVER445 - 立即发货$123.24查看详情

Related Product Highlight

LMG3410R050/LMG3411R050 600 V GaN FET 功率级 Texas Instruments 的 LMG3410R050/LMG3411R050 600 V GaN FET 功率级在易于使用的解决方案中提供了更高的开关性能和效率。
TI LMG3410R070 氮化镓 (GaN) 功率级 TI的LMG3410R070 GaN 氮化镓功率级提供多种功能，可提高开关性能和高压应用的效率。查看LMG3410R070 氮化镓 (GaN) 功率级详情，现在订购！