VideoLibrary

4th Gen SiC MOSFETs

ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance.

2/6/2023 4:57:29 PM

Part List

图片制造商零件编号描述可供货数量价格查看详情
DIODE ARR SIC SCHOT 1200V TO247SCS230KE2HRC11DIODE ARR SIC SCHOT 1200V TO247400 - 立即发货$85.39查看详情
MOSFET 2N-CH 1200V 80A MODULEBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE0 - 立即发货$2,594.57查看详情
MOSFET 2N-CH 1200V 180A MODULEBSM180D12P3C007MOSFET 2N-CH 1200V 180A MODULE13 - 立即发货$4,584.98查看详情
DIODE SIC 650V 12A TO220ACFPSCS212AGC17DIODE SIC 650V 12A TO220ACFP55 - 立即发货$28.41查看详情
DIODE SIC 1.2KV 5A TO220ACFPSCS205KGC17DIODE SIC 1.2KV 5A TO220ACFP740 - 立即发货$53.40查看详情
DIODE SIC 650V 2.15A TO220ACPSCS302AHGC9DIODE SIC 650V 2.15A TO220ACP643 - 立即发货$24.18查看详情
DIODE SIC 1.2KV 10A TO220ACFPSCS210KGC17DIODE SIC 1.2KV 10A TO220ACFP407 - 立即发货$76.52查看详情
DIODE SIC 1.2KV 20A TO220ACFPSCS220KGC17DIODE SIC 1.2KV 20A TO220ACFP991 - 立即发货$119.09查看详情
DIODE ARR SIC 1200V 10A TO247NSCS220KE2HRC11DIODE ARR SIC 1200V 10A TO247N0 - 立即发货$129.92查看详情
DIODE ARR SIC SCHOT 650V TO247NSCS230AE2HRC11DIODE ARR SIC SCHOT 650V TO247N547 - 立即发货$80.26查看详情
DIODE ARR SIC SCHOT 1200V TO247SCS210KE2HRC11DIODE ARR SIC SCHOT 1200V TO247450 - 立即发货$90.11查看详情
DIODE ARR SIC SCHOT 650V TO247NSCS240AE2HRC11DIODE ARR SIC SCHOT 650V TO247N632 - 立即发货$122.59查看详情
DIODE ARR SIC SCHOT 650V TO247NSCS220AE2GC11DIODE ARR SIC SCHOT 650V TO247N483 - 立即发货$82.70查看详情
DIODE ARR SIC SCHOT 650V TO247NSCS220AE2HRC11DIODE ARR SIC SCHOT 650V TO247N202 - 立即发货$84.66查看详情
DIODE ARR SIC 1200V 20A TO247NSCS240KE2GC11DIODE ARR SIC 1200V 20A TO247N284 - 立即发货$199.84查看详情
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE12 - 立即发货$5,783.12查看详情
DIODE SIL CARB 650V 8A TO220ACFPSCS208AGC17DIODE SIL CARB 650V 8A TO220ACFP907 - 立即发货$23.61查看详情
DIODE SIL CARB 650V 10A TO220ACPSCS310AHGC9DIODE SIL CARB 650V 10A TO220ACP77 - 立即发货$30.69查看详情
1200V, 134A, CHOPPER, SILICON-CABSM120C12P2C2011200V, 134A, CHOPPER, SILICON-CA7 - 立即发货$2,430.22查看详情
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P3E005MOSFET 2N-CH 1200V 300A MODULE6 - 立即发货$11,163.55查看详情

Related Videos

ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look
ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look

发布日期：2023-09-20

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

发布日期：2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

发布日期：2023-02-06

Related Product Highlight

第四代碳化硅 SiC MOSFET ROHM 的第四代碳化硅 MOSFET 可在要求苛刻的应用中提供无与伦比的效率和性能。
第 4 代 SiC MOSFET ROHM 的第 4 代 SiC MOSFET 具有低开关损耗并支持 15 V 栅源电压，有助于节省设备功耗。
BD3430 DAC 芯片 - MUS-ICT™ 系列 ROHM 的 MUS-ICT 系列包含 BD3430 DAC 芯片，是一种高级音频 IC。

Related Articles and Blogs

如何在大功率应用中减少损耗、提高能效并扩大温度范围 设计人员可以利用第四代 SiC MOSFET 大幅提高高电压、大功率控制电路的能效，降低成本并缩小尺寸。
宽带隙半导体重塑交通运输行业 随着面向电动和混合动力汽车以及更清洁公共交通的解决方案推出，整个交通运输行业正在经历一场彻底的变革。
宽带隙半导体在航空航天和卫星方面的应用 宽带隙半导体在电源转换方面具备多种优势，如功率密度和效率更高，以及系统尺寸和重量更小。

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
4th Generation SiC MOSFETs This presentation will provide a brief overview of ROHM’s latest SiC trench MOSFETs and their advantages for power electronics applications.