4th Gen SiC MOSFETs

ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance.

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4th Gen SiC MOSFETs

ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance.