Toshiba Electronic Devices and Storage Corporation

Small Signal MOSFETs

Toshiba's small signal MOSFETs designed to save critical board space

Toshiba Semiconductor and Storage's Small Signal MOSFETsToshiba's broad selection of low on-resistance and low-voltage drive small signal MOSFETs (S-MOS) is suitable for high-speed switching devices in portable electronics equipment. These MOSFETs feature low capacitance ratings and are designed to save critical board space. Among the features and benefits of these devices are no carrier storage effect, superior frequency and switching characteristics, rugged and no current concentration, voltage-controlled device resulting in low drive power, and easy parallel connection.

Features
  • Low voltage
    • low driving voltage
    • VDSS = 20 V, 30 V, 60 V
  • High switching performance
  • Low on-resistance
  • Ultra small package
  • No carrier storage effect; superior frequency and switching characteristics
  • Rugged and no current concentration
  • Voltage-controlled device, hence low drive power
  • Easy parallel connection

Signal MOSFETs

图片制造商零件编号描述可供货数量价格
MOSFET P-CH 20V 2A CST3BSSM3J46CTB(TPL3)MOSFET P-CH 20V 2A CST3B29 - 立即发货$4.48查看详情
MOSFET P-CH 20V 1.5A UFVSSM5G10TU(TE85L,F)MOSFET P-CH 20V 1.5A UFV40 - 立即发货$3.34查看详情
MOSFET 2P-CH 30V 0.1A ES6SSM6P15FE(TE85L,F)MOSFET 2P-CH 30V 0.1A ES614890 - 立即发货$3.66查看详情
MOSFET 2P-CH 20V 0.1A ES6SSM6P35FE(TE85L,F)MOSFET 2P-CH 20V 0.1A ES60 - 立即发货See Page for Pricing查看详情
发布日期： 2010-08-05

Related Product Training Modules

Small Signal MOSFET The small signal MOSFET's have a low driving voltage of 1.2V along with no carrier storage effect.