Toshiba's broad selection of low on-resistance and low-voltage drive small signal MOSFETs (S-MOS) is suitable for high-speed switching devices in portable electronics equipment. These MOSFETs feature low capacitance ratings and are designed to save critical board space. Among the features and benefits of these devices are no carrier storage effect, superior frequency and switching characteristics, rugged and no current concentration, voltage-controlled device resulting in low drive power, and easy parallel connection.
Features
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- Low voltage
- low driving voltage
- VDSS = 20 V, 30 V, 60 V
- High switching performance
- Low on-resistance
- Ultra small package
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- No carrier storage effect; superior frequency and switching characteristics
- Rugged and no current concentration
- Voltage-controlled device, hence low drive power
- Easy parallel connection
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