SCT3160KWATL/SCT3160KWAHRTL High-Performance SiC MOSFETs

The SCT3160KWATL and SCT3160KWAHRTL are cutting-edge silicon carbide (SiC) MOSFETs developed by ROHM Semiconductor. These devices are designed to deliver superior performance in high-voltage and high-temperature applications, making them ideal for a wide range of power electronics. The SCT3160KWATL offers a robust solution with a 1,200 V drain-source voltage and a continuous drain current of 17 A, housed in a TO-263-7LA package. Similarly, the SCT3160KWAHRTL, also rated at 1,200 V and 17 A, is AEC-Q101 qualified, ensuring automotive-grade reliability. Both MOSFETs feature low on-resistance, fast switching speeds, and high thermal conductivity, contributing to their efficiency and durability. These characteristics make them suitable for applications such as electric vehicle powertrains, renewable energy systems, and industrial power supplies. By integrating these SiC MOSFETs, designers can achieve higher efficiency, reduced heat dissipation, and improved overall system performance.