RBA300N10EANS-3UA02/RBA300N10EHPF-5UA02 N-Channel Power MOSFETs

Renesas RBA300N10EANS-3UA02 and RBA300N10EHPF-5UA02 N-channel MOSFETs are designed for high-current switching applications. This product adopts the latest wafer process called ANM3. Compared to the conventional ANM2, the ANM3 achieves a 30% reduction in on-resistance, a 10% reduction in Q_g characteristics, and a 40% reduction in Q_gd. The package achieves a 50% reduction in volume compared to the traditional TO-263, contributing to downsizing customer sets.