Advanced Linear Devices, Inc.

Precision N-Channel EPAD® MOSFET Array

Advanced Linear Devices quad, high drive, Zero-Threshold™ matched pair

Image of Advanced Linear Devices' Precision N-Channel EPAD® MOSFET ArrayAdvanced Linear Devices ALD210800A/ALD210800 precision n-channel MOSFET arrays featuring Zero-Threshold voltage establish new industry benchmarks for forward transconductance and output conductance. Designed with ALD's proven EPAD CMOS technology, the arrays allow circuit designers to build ultra-low supply voltages that were never before possible.

Benefits
  • High transconductance and output conductance
  • Low RDS(ON) of 25 Ω
  • Output current > 50 mA
  • Matched and tracked temperature coefficient
  • Tight lot-to-lot parametric control
  • Positive, zero, and negative VGS(th) temperature coefficient
  • Low input capacitance and leakage currents

EPAD MOSFET Array

图片制造商零件编号描述封装/外壳不同 Vgs 时栅极电荷 (Qg)（最大值）可供货数量价格
MOSFET 4N-CH 10.6V 0.08A 16SOICALD210800SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC16-SOIC（0.154"，3.90mm 宽）-3 - 立即发货
1 : ¥154.57
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MOSFET 4N-CH 10.6V 0.08A 16SOICALD210800ASCLMOSFET 4N-CH 10.6V 0.08A 16SOIC16-SOIC（0.154"，3.90mm 宽）-0 - 立即发货
1 : ¥177.82
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MOSFET 4N-CH 10.6V 0.08A 16PDIPALD210800APCLMOSFET 4N-CH 10.6V 0.08A 16PDIP16-DIP（0.300"，7.62mm）-0 - 立即发货
1 : ¥192.22
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发布日期： 2013-05-02