Single FETs, MOSFETs

Results: 6
Series
HEXFET®OptiMOS™StrongIRFET™ 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V75 V80 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 120A (Tc)32A (Ta), 191A (Tc)100A (Tc)120A (Tc)195A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
0.75mOhm @ 150A, 10V1.9mOhm @ 100A, 10V2mOhm @ 100A, 10V2.3mOhm @ 100A, 10V2.6mOhm @ 100A, 10V3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.8V @ 143µA3.3V @ 280µA3.7V @ 250µA3.8V @ 155µA3.8V @ 194µA3.8V @ 208µA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V117 nC @ 10 V166 nC @ 10 V186 nC @ 10 V287 nC @ 10 V407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7800 pF @ 30 V8130 pF @ 37.5 V8700 pF @ 40 V12100 pF @ 40 V13660 pF @ 25 V16000 pF @ 30 V
Power Dissipation (Max)
3W (Ta), 214W (Tc)3.8W (Ta), 250W (Tc)214W (Tc)300W (Tc)375W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-8-1PG-TO220-3TO-220AB
Package / Case
8-PowerSFNTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPT059N15N3ATMA1
IPT007N06NATMA1
MOSFET N-CH 60V 300A 8HSOF
Infineon Technologies
10,982
In Stock
1 : ¥49.34000
Cut Tape (CT)
2,000 : ¥26.22314
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300A (Tc)
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
287 nC @ 10 V
±20V
16000 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
TO-220AB PKG
IRFB7730PBF
MOSFET N-CH 75V 195A TO220AB
Infineon Technologies
5,772
In Stock
1 : ¥18.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
195A (Tc)
6V, 10V
2.6mOhm @ 100A, 10V
3.7V @ 250µA
407 nC @ 10 V
±20V
13660 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
IPP020N06NAKSA1
MOSFET N-CH 60V 29A/120A TO220-3
Infineon Technologies
398
In Stock
1 : ¥29.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
29A (Ta), 120A (Tc)
6V, 10V
2mOhm @ 100A, 10V
2.8V @ 143µA
106 nC @ 10 V
±20V
7800 pF @ 30 V
-
3W (Ta), 214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
SGP15N60XKSA1
IPP034NE7N3GXKSA1
MOSFET N-CH 75V 100A TO220-3
Infineon Technologies
1,425
In Stock
1 : ¥20.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
100A (Tc)
10V
3.4mOhm @ 100A, 10V
3.8V @ 155µA
117 nC @ 10 V
±20V
8130 pF @ 37.5 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP023N08N5AKSA1
MOSFET N-CH 80V 120A TO220-3
Infineon Technologies
368
In Stock
1 : ¥20.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
2.3mOhm @ 100A, 10V
3.8V @ 208µA
166 nC @ 10 V
±20V
12100 pF @ 40 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
912
In Stock
1 : ¥23.07000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
32A (Ta), 191A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 194µA
186 nC @ 10 V
±20V
8700 pF @ 40 V
-
3.8W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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of 6

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.