Single FETs, MOSFETs

Results: 2
Series
U-MOSIVU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
107mOhm @ 2A, 10V134mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V15.1 nC @ 10 V
Vgs (Max)
+10V, -20V±20V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 30 V660 pF @ 10 V
Power Dissipation (Max)
1W (Ta)2W (Ta)
Operating Temperature
150°C150°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
19,022
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥0.99524
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.5A (Ta)
4.5V, 10V
107mOhm @ 2A, 10V
2.8V @ 1mA
7 nC @ 10 V
±20V
235 pF @ 30 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
114,851
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥0.99524
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4V, 10V
134mOhm @ 1A, 10V
2V @ 1mA
15.1 nC @ 10 V
+10V, -20V
660 pF @ 10 V
-
2W (Ta)
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.