Single FETs, MOSFETs

Results: 12
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon TechnologiesonsemiSTMicroelectronicsTexas InstrumentsVishay Siliconix
Series
-CoolMOS™ P7HEXFET®NexFET™OptiMOS™PowerTrench®STripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
55 V60 V75 V600 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)7A (Ta), 22A (Tc)9A (Tc)10A (Tc)16A (Ta), 80A (Tc)17A (Ta), 45A (Tc)18A (Ta), 80A (Tc)30A (Tc)45A (Ta), 100A (Tc)50A (Tc)53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
5mOhm @ 80A, 10V6mOhm @ 45A, 10V6mOhm @ 80A, 10V9.5mOhm @ 40A, 10V16.5mOhm @ 28A, 10V18mOhm @ 27.5A, 10V19mOhm @ 20A, 10V22mOhm @ 50A, 10V40mOhm @ 15A, 10V200mOhm @ 6A, 5V360mOhm @ 2.7A, 10V3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.3V @ 250µA2.5V @ 250µA2.8V @ 36µA4V @ 140µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.87 nC @ 10 V8.4 nC @ 5 V13 nC @ 10 V17 nC @ 5 V20 nC @ 10 V24 nC @ 10 V27 nC @ 10 V60 nC @ 10 V72 nC @ 10 V80 nC @ 10 V95 nC @ 10 V150 nC @ 20 V
Vgs (Max)
±10V±18V±20V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V400 pF @ 25 V555 pF @ 400 V660 pF @ 25 V950 pF @ 30 V1300 pF @ 25 V1696 pF @ 25 V1880 pF @ 30 V2000 pF @ 30 V2020 pF @ 25 V3900 pF @ 25 V5150 pF @ 25 V
Power Dissipation (Max)
370mW (Ta)2.1W (Ta), 23.5W (Tc)3W (Ta), 83W (Tc)22W (Tc)43W (Tc)70W (Tc)107W (Tc)110W (Tc)131W (Tc)245W (Tc)255W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3PG-TO220-FPSOT-23-3TO-220TO-220-3TO-220ABTO-220F
Package / Case
TO-220-3TO-220-3 Full PackTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
FDP060AN08A0
MOSFET N-CH 75V 16A/80A TO220-3
onsemi
4,472
In Stock
1 : ¥23.32000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
16A (Ta), 80A (Tc)
6V, 10V
6mOhm @ 80A, 10V
4V @ 250µA
95 nC @ 10 V
±20V
5150 pF @ 25 V
-
255W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
SOT-23-3
DMN65D8L-7
MOSFET N-CH 60V 310MA SOT23
Diodes Incorporated
380,143
In Stock
1 : ¥1.40000
Cut Tape (CT)
3,000 : ¥0.23992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
0.87 nC @ 10 V
±20V
22 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRFZ46NPBF
MOSFET N-CH 55V 53A TO220AB
Infineon Technologies
23,789
In Stock
1 : ¥7.39000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
55 V
53A (Tc)
10V
16.5mOhm @ 28A, 10V
4V @ 250µA
72 nC @ 10 V
±20V
1696 pF @ 25 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRLZ14PBF
MOSFET N-CH 60V 10A TO220AB
Vishay Siliconix
2,747
In Stock
1 : ¥8.78000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
4V, 5V
200mOhm @ 6A, 5V
2V @ 250µA
8.4 nC @ 5 V
±10V
400 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220F
AOTF2618L
MOSFET N-CH 60V 7A/22A TO220-3F
Alpha & Omega Semiconductor Inc.
817
In Stock
1 : ¥8.87000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
7A (Ta), 22A (Tc)
4.5V, 10V
19mOhm @ 20A, 10V
2.5V @ 250µA
20 nC @ 10 V
±20V
950 pF @ 30 V
-
2.1W (Ta), 23.5W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
5,023
In Stock
1 : ¥9.93000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
360mOhm @ 2.7A, 10V
4V @ 140µA
13 nC @ 10 V
±20V
555 pF @ 400 V
-
22W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-220-3
CSD18534KCS
MOSFET N-CH 60V 45A/100A TO220-3
Texas Instruments
1,250
In Stock
1 : ¥10.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
45A (Ta), 100A (Tc)
4.5V, 10V
9.5mOhm @ 40A, 10V
2.3V @ 250µA
24 nC @ 10 V
±20V
1880 pF @ 30 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
STP36NF06L
MOSFET N-CH 60V 30A TO220AB
STMicroelectronics
551
In Stock
1 : ¥11.33000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Tc)
5V, 10V
40mOhm @ 15A, 10V
2.5V @ 250µA
17 nC @ 5 V
±18V
660 pF @ 25 V
-
70W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP55NF06
MOSFET N-CH 60V 50A TO220AB
STMicroelectronics
37,707
In Stock
1 : ¥12.81000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
10V
18mOhm @ 27.5A, 10V
4V @ 250µA
60 nC @ 10 V
±20V
1300 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
RFP50N06
MOSFET N-CH 60V 50A TO220-3
onsemi
712
In Stock
12,000
Factory
1 : ¥18.31000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
10V
22mOhm @ 50A, 10V
4V @ 250µA
150 nC @ 20 V
±20V
2020 pF @ 25 V
-
131W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
IPP060N06NAKSA1
MOSFET N-CH 60V 17A/45A TO220-3
Infineon Technologies
494
In Stock
1 : ¥12.81000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 45A (Tc)
6V, 10V
6mOhm @ 45A, 10V
2.8V @ 36µA
27 nC @ 10 V
±20V
2000 pF @ 30 V
-
3W (Ta), 83W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
FDP050AN06A0
MOSFET N-CH 60V 18A/80A TO220-3
onsemi
0
In Stock
Check Lead Time
1 : ¥23.81000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta), 80A (Tc)
6V, 10V
5mOhm @ 80A, 10V
4V @ 250µA
80 nC @ 10 V
±20V
3900 pF @ 25 V
-
245W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.