Single FETs, MOSFETs

Results: 2
Manufacturer
Microchip TechnologyNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
6 V20 V
Current - Continuous Drain (Id) @ 25°C
530mA (Ta)2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
84mOhm @ 100mA, 4.5V1.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1.2V @ 250µA
Vgs (Max)
-6V±8V
Power Dissipation (Max)
270mW (Ta)370mW (Ta), 2.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DFN0606-3SC-70-6
Package / Case
3-XFDFN6-TSSOP, SC-88, SOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-363
MIC94052YC6-TR
MOSFET P-CH 6V 2A SC70-6
Microchip Technology
14,178
In Stock
1 : ¥6.24000
Cut Tape (CT)
3,000 : ¥5.02851
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
6 V
2A (Ta)
1.8V, 4.5V
84mOhm @ 100mA, 4.5V
1.2V @ 250µA
-
-6V
-
-
270mW (Ta)
-40°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
DFN0606-3
PMH950UPEH
MOSFET P-CH 20V 530MA DFN0606-3
Nexperia USA Inc.
56,725
In Stock
1 : ¥2.71000
Cut Tape (CT)
10,000 : ¥0.40465
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
530mA (Ta)
1.2V, 4.5V
1.4Ohm @ 500mA, 4.5V
950mV @ 250µA
0.5 nC @ 4 V
±8V
36 pF @ 10 V
-
370mW (Ta), 2.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.