Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFBG30PBF MOSFET N-CH 1000V 3.1A TO220AB Vishay Siliconix	3,824 In Stock	1 : ¥20.20000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	3.1A (Tc)	10V	5Ohm @ 1.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	980 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD80R2K0P7ATMA1 MOSFET N-CH 800V 3A TO252-3 Infineon Technologies	2,567 In Stock	1 : ¥7.31000 Cut Tape (CT) 2,500 : ¥3.01059 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	3A (Tc)	10V	2Ohm @ 940mA, 10V	3.5V @ 50µA	9 nC @ 10 V	±20V	175 pF @ 500 V	-	24W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.