Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedonsemiTexas InstrumentsVishay Siliconix
Series
-NexFET™TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V40 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)2.6A (Ta)37A (Tc)41A (Ta), 235A (Tc)76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.7V, 4.5V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 50A, 10V8.9mOhm @ 10A, 4.5V47.5mOhm @ 10A, 10V150mOhm @ 2.8A, 10V4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.06V @ 250µA1.15V @ 250µA3.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V9.7 nC @ 4.5 V26.9 nC @ 10 V48 nC @ 10 V65 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V1055 pF @ 50 V1790 pF @ 10 V1805 pF @ 75 V4300 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)2W (Ta)2.8W (Ta), 69W (Tc)3.8W (Ta), 128W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)8-VSONP (3x3.3)PowerPAK® SO-8SOT-223-3SOT-23-3
Package / Case
8-PowerTDFN, 5 Leads8-PowerVDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
371,171
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD25402Q3A
MOSFET P-CH 20V 76A 8VSON
Texas Instruments
51,006
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.98840
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
76A (Tc)
1.8V, 4.5V
8.9mOhm @ 10A, 4.5V
1.15V @ 250µA
9.7 nC @ 4.5 V
±12V
1790 pF @ 10 V
-
2.8W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
SOT-223-3
ZXMP10A18GTA
MOSFET P-CH 100V 2.6A SOT223
Diodes Incorporated
22,656
In Stock
81,000
Factory
1 : ¥14.45000
Cut Tape (CT)
1,000 : ¥6.86758
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
2.6A (Ta)
6V, 10V
150mOhm @ 2.8A, 10V
4V @ 250µA
26.9 nC @ 10 V
±20V
1055 pF @ 50 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
8-PowerTDFN, 5 Leads
NVMFS5C426NWFAFT1G
MOSFET N-CH 40V 41A/235A 5DFN
onsemi
0
In Stock
Check Lead Time
1 : ¥23.32000
Cut Tape (CT)
1,500 : ¥12.07329
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
41A (Ta), 235A (Tc)
10V
1.3mOhm @ 50A, 10V
3.5V @ 250µA
65 nC @ 10 V
±20V
4300 pF @ 25 V
-
3.8W (Ta), 128W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads
PowerPAK SO-8
SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥12.89000
Cut Tape (CT)
3,000 : ¥5.80636
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
37A (Tc)
10V
47.5mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1805 pF @ 75 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.