FET, MOSFET Arrays

Results: 4
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Half Bridge)N and P-Channel Complementary
FET Feature
-Logic Level GateLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
20V40V
Current - Continuous Drain (Id) @ 25°C
5.1A, 3.2A45A (Tj)60A (Tj)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 30A, 10V5mOhm @ 30A, 10V7mOhm @ 22A, 10V55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 110µA2V @ 13µA3V @ 13µA3V @ 9µA
Gate Charge (Qg) (Max) @ Vgs
2.8nC @ 4.5V12nC @ 10V17nC @ 10V19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
419pF @ 10V701pF @ 25V1027pF @ 25V1136pF @ 25V
Power - Max
2.5W41W (Tc)52W (Tc)
Package / Case
8-PowerTDFN8-PowerVDFN
Supplier Device Package
PG-TDSON-8-57PG-TSDSON-8-FL
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TSDSON-8
BSZ15DC02KDHXTMA1
MOSFET N/P-CH 20V 5.1A 8TSDSON
Infineon Technologies
16,602
In Stock
1 : ¥10.34000
Cut Tape (CT)
5,000 : ¥4.09081
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
Logic Level Gate, 2.5V Drive
20V
5.1A, 3.2A
55mOhm @ 5.1A, 4.5V
1.4V @ 110µA
2.8nC @ 4.5V
419pF @ 10V
2.5W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerTDFN
PG-TSDSON-8-FL
18,180
In Stock
1 : ¥11.17000
Cut Tape (CT)
5,000 : ¥4.39371
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
45A (Tj)
7mOhm @ 22A, 10V
3V @ 9µA
12nC @ 10V
701pF @ 25V
41W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
29,218
In Stock
1 : ¥13.46000
Cut Tape (CT)
5,000 : ¥5.04391
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
Logic Level Gate
40V
60A (Tj)
4.5mOhm @ 30A, 10V
2V @ 13µA
19nC @ 10V
1136pF @ 25V
52W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
1,205
In Stock
1 : ¥13.46000
Cut Tape (CT)
5,000 : ¥5.29812
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
60A (Tj)
5mOhm @ 30A, 10V
3V @ 13µA
17nC @ 10V
1027pF @ 25V
52W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
Showing
of 4

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.