FET, MOSFET Arrays

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon Technologiesonsemi
Series
-OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Technology
-MOSFET (Metal Oxide)
Configuration
N and P-ChannelN and P-Channel Complementary
FET Feature
-Logic Level GateLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
20V30V
Current - Continuous Drain (Id) @ 25°C
2.3A, 2A3A, 2.2A4.6A (Ta), 3.3A (Ta)5A, 7A
Rds On (Max) @ Id, Vgs
28mOhm @ 7A, 10V50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V57mOhm @ 2.3A, 10V70mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.45V @ 250µA1.5V @ 250µA2V @ 11µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V4.5nC @ 10V, 6.5nC @ 10V4.6nC @ 4.5V20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V, 254pF @ 15V275pF @ 15V324pF @ 10V670pF @ 15V
Power - Max
500mW700mW700mW (Ta)2W
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
8-SOICPG-TSOP6-6SuperSOT™-6TSOT-26
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SG6858TZ
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
onsemi
2,840
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.89055
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
3A, 2.2A
70mOhm @ 3A, 4.5V
1.5V @ 250µA
4.6nC @ 4.5V
324pF @ 10V
700mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT™-6
TSOT-26
DMC3071LVT-7
MOSFET N/P-CH 30V 4.6A TSOT26
Diodes Incorporated
7,532
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.82347
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
-
30V
4.6A (Ta), 3.3A (Ta)
50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
2.5V @ 250µA
4.5nC @ 10V, 6.5nC @ 10V
190pF @ 15V, 254pF @ 15V
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SC-74, SOT-457
BSL308CH6327XTSA1
MOSFET N/P-CH 30V 2.3A TSOP6-6
Infineon Technologies
18,387
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.93664
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
Logic Level Gate, 4.5V Drive
30V
2.3A, 2A
57mOhm @ 2.3A, 10V
2V @ 11µA
1.5nC @ 10V
275pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
8-SOIC
AO4630
MOSFET N/P-CH 30V 5A/7A 8SOIC
Alpha & Omega Semiconductor Inc.
30,985
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.38207
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
-
N and P-Channel Complementary
-
30V
5A, 7A
28mOhm @ 7A, 10V
1.45V @ 250µA
20nC @ 10V
670pF @ 15V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
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of 4

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.