SIHU6N80E-GE3

DigiKey Part Number
SIHU6N80E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHU6N80E-GE3
Description
MOSFET N-CH 800V 5.4A IPAK
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 5.4A (Tc) 78W (Tc) Through Hole IPAK (TO-251)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
827 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251)
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥18.47000¥18.47
10¥15.31900¥153.19
100¥12.19160¥1,219.16
500¥10.31594¥5,157.97
1,000¥8.75297¥8,752.97
3,000¥8.31527¥24,945.81
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.