Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™ 6OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)7.7A (Ta), 31A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 50A, 10V23mOhm @ 10A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA3.3V @ 13µA3.8V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V9.3 nC @ 10 V78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V690 pF @ 50 V5200 pF @ 50 V
Power Dissipation (Max)
300mW (Tj)3W (Ta), 48W (Tc)167W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-34PG-TSDSON-8 FLSOT-23-3 (TO-236)
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
13,462
In Stock
1 : ¥9.93000
Cut Tape (CT)
5,000 : ¥3.92049
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
7.7A (Ta), 31A (Tc)
8V, 10V
23mOhm @ 10A, 10V
3.3V @ 13µA
9.3 nC @ 10 V
±20V
690 pF @ 50 V
-
3W (Ta), 48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSDSON-8 FL
8-PowerTDFN
PG-TDSON-8-34
IAUC100N10S5N040ATMA1
MOSFET N-CH 100V 100A 8TDSON-34
Infineon Technologies
8,151
In Stock
1 : ¥21.51000
Cut Tape (CT)
5,000 : ¥9.33363
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 90µA
78 nC @ 10 V
±20V
5200 pF @ 50 V
-
167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
SOT 23-3
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23
onsemi
17,438
In Stock
1 : ¥2.55000
Cut Tape (CT)
3,000 : ¥0.43247
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.