Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V10V
Rds On (Max) @ Id, Vgs
65mOhm @ 2.2A, 4.5V205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V58 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 10 V760 pF @ 25 V
Power Dissipation (Max)
500mW (Ta)66W (Tc)
Supplier Device Package
SOT-23-3TO-252AA (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN337N
MOSFET N-CH 30V 2.2A SUPERSOT3
onsemi
108,159
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.36983
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.2A (Ta)
2.5V, 4.5V
65mOhm @ 2.2A, 4.5V
1V @ 250µA
9 nC @ 4.5 V
±8V
300 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO252-3
IRFR5410TRPBF
MOSFET P-CH 100V 13A DPAK
Infineon Technologies
22,175
In Stock
1 : ¥11.58000
Cut Tape (CT)
2,000 : ¥4.78090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
13A (Tc)
10V
205mOhm @ 7.8A, 10V
4V @ 250µA
58 nC @ 10 V
±20V
760 pF @ 25 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.