Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedToshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET® Gen VU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
630mA (Ta)10A (Ta)85.9A (Ta), 350.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
0.47mOhm @ 20A, 10V15.3mOhm @ 4A, 4.5V400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V29.9 nC @ 4.5 V180 nC @ 10 V
Vgs (Max)
±6V±8V+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds
60.67 pF @ 16 V2600 pF @ 10 V8960 pF @ 15 V
Power Dissipation (Max)
280mW (Ta)1W (Ta)6.25W (Ta), 104.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-UDFNB (2x2)PowerPAK® SO-8SOT-523
Package / Case
6-WDFN Exposed PadPowerPAK® SO-8SOT-523
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMG1012T-7
MOSFET N-CH 20V 630MA SOT-523
Diodes Incorporated
342,999
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.42141
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
46,075
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.01990
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
10A (Ta)
1.5V, 4.5V
15.3mOhm @ 4A, 4.5V
1V @ 1mA
29.9 nC @ 4.5 V
±8V
2600 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
PowerPAK SO-8 Single
SIR500DP-T1-RE3
N-CHANNEL 30 V (D-S) 150C MOSFET
Vishay Siliconix
6,999
In Stock
1 : ¥12.97000
Cut Tape (CT)
3,000 : ¥5.83725
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
85.9A (Ta), 350.8A (Tc)
4.5V, 10V
0.47mOhm @ 20A, 10V
2.2V @ 250µA
180 nC @ 10 V
+16V, -12V
8960 pF @ 15 V
-
6.25W (Ta), 104.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.