Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTMFS4854NST3G MOSFET N-CH 25V 15.2A/149A SO8FL onsemi	0 In Stock 14,828 Marketplace	321 : ¥6.84819 Bulk	SENSEFET®	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	15.2A (Ta), 149A (Tc)	3.2V, 10V	2.5mOhm @ 15A, 10V	2.5V @ 250µA	85 nC @ 11.5 V	±16V	4830 pF @ 12 V	-	900mW (Ta), 86.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN
NTMFS4833NST1G MOSFET N-CH 30V 16A/156A SO-8FL onsemi	0 In Stock	Obsolete	SENSEFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	16A (Ta), 156A (Tc)	4.5V, 10V	2.2mOhm @ 30A, 10V	2.5V @ 250µA	86 nC @ 11.5 V	±20V	5250 pF @ 12 V	-	900mW (Ta), 86.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN
NTMFS4833NST3G MOSFET N-CH 30V 16A/156A SO-8FL onsemi	0 In Stock	Obsolete	SENSEFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	16A (Ta), 156A (Tc)	4.5V, 10V	2.2mOhm @ 30A, 10V	2.5V @ 250µA	86 nC @ 11.5 V	±20V	5250 pF @ 12 V	-	900mW (Ta), 86.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN
NTMFS4854NST1G MOSFET N-CH 25V 15.2A/149A SO8FL onsemi	0 In Stock	Obsolete	SENSEFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	15.2A (Ta), 149A (Tc)	3.2V, 10V	2.5mOhm @ 15A, 10V	2.5V @ 250µA	85 nC @ 11.5 V	±16V	4830 pF @ 12 V	-	900mW (Ta), 86.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.