With unique and proprietary integration of GaN power, GaN drive, logic and protection, GaNFast power ICs enable 3x faster charging in half the size and weight and up to 40% energy savings vs. old, slow silicon solutions.

GaN Power ICs Enable the New Revolution in Power Electronics

GaN Power ICs with monolithically-integrated gate drive, logic and FET in low-cost, high volume packaging enables power systems to run at multi-MHz switching frequencies simply, predictably and with high device and system reliability.

GaN Half-Bridge IC = Smallest PCB Area, Fewest Components, No Ringing, No Glitching.

The MicroLeadFrame® package (MLF®) is a near CSP plastic encapsulated package with a copper leadframe substrate.

This application note includes a detailed description of the NV6169 and GaNSense functions, schematics and PCB layout guidelines, in-circuit examples and waveforms, and thermal management instructions.

Smartphone screens, batteries and increased 5G features with intensified data processing and transmission rates and volumes have put a spotlight on charging speeds and the size, weight and cost of leading-edge travel adapters.

Gallium Nitride (GaN) and Silicon Carbide (SiC) are ‘wide-bandgap’ (WBG) devices.

Electrify Our World - Exhibitor Seminar presentation.

GaN Adoption Market-by-Market presentation.

Gallium NItride (GaN) must operate safely and efficiently in a high-frequency ecosystem to fulfil the promise of a WBG material, and higher-level device integration is a critical enabler.

As internet protocol (IP) traffic continues to rise, economies of scale mean that data centers are consolidating into ‘hyperscale’ operations.

Gallium nitride (GaN) iii is a ‘wide band-gap’ material because it offers an electron band-gap that is 3x larger than silicon, which means GaN can handle 10x stronger electric fields and deliver high power with dramatically smaller chips

This application note includes PCB layout guidelines and examples to help designers to design for correct thermal management for NV6123/25/27. These guidelines are intended to extract maximum efficiency and power density when using GaN Power ICs.

The transition from silicon chips to gallium nitride (GaN) will play a vital role in enabling & accelerating a variety of industries to achieve the goal of net zero carbon emissions by 2050.

Navitas, GaN Industry Leader, Accelerates with Over 50M Units Shipped.

OEMs are looking for ways to reduce their carbon footprint by reducing materials and energy use related to their products.

High-speed – or rather – high-frequency power topologies mean smaller and smaller passive components, to the extreme case that in a 40MHz phi-2 converter at Stanford Universityii, the ferrite material completely disappears in an ‘air-core’ inductor.

International Women in Engineering Day was initiated by the United Kingdom’s Women's Engineering Society (WES) on June 23, 2014.

Delivering GaN Quality and Reliability at Scale Across a Growing Range of Powers and Applications