Watch Nexperia discuss what to look out for when selecting a MOSFET for your PMSM or BLDC drive applications, such as picking a device that has a long reverse recovery time to avoid current spikes, or paying close attention short circuit robustness.

The main ESD failure mechanism of MOSFETs is through the breakdown of the gate oxide where the gate-source oxide is the most sensitive area.

Watch Nexperia unravels the complexities of EMC, and the challenges engineers face in designing, testing, and maintaining electronic systems. From the fundamentals of electromagnetic interference (EMI) to the intricate mitigation techniques employed.

When designing switched-mode systems it can be challenging to provide soft and efficient operation without affecting EMC performance.

Learn about DFN packages and how they compare to older SMD packages. This video explains how the small form factor of leadless DFN (Dual Flat No Leads) packages makes them an ideal solution to the space constraints of modern electronic devices.

Explore Nexperia's ASFETs tailored for next-generation Power-over-Ethernet (PoE), eFuse, and relay replacement applications.

Industrial power supply units come in different shapes and sizes, but one commonality is the need to be safe and efficient. To ensure maximum efficiency is met designers are looking to power GaN FETs.

Learn how the unique properties of compact, leadless DFN packages compared to older leaded SMD packages translate into significant benefits for electronic designs.

Nexperia gives an overview into the differences between power GaN FET configurations, cascode and enhancement-mode (e-mode). Diving into the technical details such as the behaviors but also the electrical characteristics.

Inverters play a crucial role in any solar energy system, whether this be a 2 kW residential system or a 5 MW utility power plant.

Team Nexperia is stepping up in SiC. They have just released their first automotive-grade SiC diode to add to their quickly growing portfolio of SiC solutions.

Learn about the importance of switching performance in diode operation and which diodes have better switching performance- Silicon Carbide or Silicon.

Learn about Merged Pin Schottky (MPS) silicon carbide diodes and how they differ from basic silicon carbide power diodes. Nexperia’s MPS SiC diodes are a hybrid of Silicon Carbide Schottky and P-N junction diodes.

Learn about silicon carbide and the unique properties that distinguish it from silicon, including a three times higher energy gap, a ten times higher electric field strength and three times higher thermal conductivity.

Learn how silicon carbide diode performance can be optimized by reducing diode thickness. Nexperia’s ‘thin SiC’ technology can realize a reduction to about one-third of the original substrate thickness without compromising mechanical stability.

48V hot swap applications often require MOSFETs that provide strong SOA and low RDS(on). To achieve this much larger packages are needed, such as D2PAK or D2PAK-7.

Any MOSFET device turning on or off will need to go through linear mode, usually for a matter of nanoseconds.

Discover how Nexperia's ASFETs for Hot swap and Soft Start applications excel by combining strong Safe Operating Area and low RDS(on) in a single device, ensuring optimal reliability and efficiency.

In AC/DC and DC/DC power supply applications, designers often choose MOSFETs with low RDS(on) and low switching losses (Qgtot & Qgd) to give the required efficiency. Nexperia discusses a less understood datasheet parameter Qrr.

In Nexperia’s Explainers video, we explore our latest trench technology in automotive power MOSFETs, designed for the transition to 48V architectures from traditional 12V systems.