GSJA65R041 Low-Noise Super Junction MOSFETs
Good-Ark Semiconductor's 650 V, 70 A, 37 mΩ N-channel MOSFET comes in a TO-247 package
Good-Ark Semiconductor's GSJA65R041 is a 650 V, 70 A, 37 mΩ N-channel low-noise super junction MOSFET that is designed to meet the demand of noise-sensitive applications including motors drivers where noise suppression and low power consumption are critical.
Utilizing Good-Ark Semiconductor's multi-EPI technology, the GSJA65R041 has an optimized cell structure to reduce noise and ringing while achieving low power consumption with its outstanding switching speed and superior dv/dt capability.
This device offers greater flexibility for design engineers to balance noise mitigation while maintaining a fast reverse recovery time (Trr) , low reverse recovery charge (Qrr), and minimizing EMI and switching loss. Packaged in the TO-247 package, the GSJA65R041 is an ideal choice for EV chargers, servers standby power, notebook adapters and chargers, LED lighting, and PV inverters.
- Low noise and low gate-charge
- Best-in-class on-resistance
- High power density and efficiency
- Low switching and conduction loss
- Low reverse recovery charge and time
- Reduces overshoot
- Greater design flexibility to balance noise mitigation and power consumption
- Fast switching speed and superior dv/dt capability
- ID: 70 A (max.)
- VDS: 650 V (max.)
- VGS: ±30 (max.)
- VGS(TH): 3.0 V (min.) 5.0 (max.) at VDS = VGS and ID = 250 µA
- RDS(ON): 37 mΩ (typ.), 41 mΩ (max.) at ID = 35 A and VGS = 10 V
- QGD: 210 nC (typ.) at VDD = 480 V, ID = 50 A, and VGS = 10 V
- QG: 326 nC (typ.) at VDD = 480 V, ID = 50 A, and VGS = 10 V
- Ciss: 7,132 pF
- TJ, TSTG: -55°C to +150°C
- Servers and UPS
- EV chargers and PV inverters
- Solar and telecom
- Notebook adapters
GSJA65R041 Low-Noise Super Junction MOSFET
图片 | 制造商零件编号 | 描述 | FET 类型 | 技术 | 漏源电压(Vdss) | 可供货数量 | 价格 | 查看详情 | |
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![]() | ![]() | GSJA65R041 | MOSFET, N-CH, SINGLE, 70.00A, 65 | N 通道 | MOSFET(金属氧化物) | 650 V | 600 - 立即发货 | $69.29 | 查看详情 |