Good-Ark Semiconductor

GSGP0R703 Ultra-Low RDS(ON) 30 V SGT MOSFETs

Good-Ark Semiconductor's 282 A, 0.55 mΩ N-channel MOSFETs come in a compact PPAK5x6 package

Image of Good Ark Semiconductor's GSGP0R703 30 V SGT MOSFETsGood-Ark Semiconductor's GSGP0R703 is a 30 V, 282 A N-channel SGT MOSFET with an ultra-low RDS(ON) of 0.55 mΩ at an ID of 30 A and VGS of 10V. The GSGP0R703 utilizes split-gate technology (SGT) and advanced clip bonding techniques to achieve outstanding FOM performance, minimizing switching and conduction losses. Packaged in a compact PPAK5x6 package, the GSGP0R703 is ideal for DC/DC converters, synchronous rectification, onboard power for servers, motor controls, and high-power-density point-of-load requiring high switching and optimal efficiency.

Features
  • Best-in-class on-resistance: 0.55 mΩ (typ.)
  • High current density
  • Lower gate-charge
  • Low switching and conduction loss
  • Lower QGD reducing Miller charge coupling
  • Small footprint and higher power density
  • Better EMI behavior
  • Cost saving
  • Outstanding FOM performance
Specifications
  • ID: 282 A (max.)
  • VDS: 30 V (max.)
  • VGS: ±20 (max.)
  • VGS(TH): 1.3 V (min.) 2.3 (max.) at VDS = VGS and ID = 250 µA
  • RDS(ON): 0.55 mΩ (typ.), 0.70 mΩ (max.) at ID = 30 A and VGS = 10 V
  • QGD: 7.7 nC (typ.) at VDD = 15 V, ID = 45 A, and VGS = 10 V
  • QG: 122 nC (typ.) at VDD = 15 V, ID = 45 A, and VGS = 10 V
  • Ciss: 9,045 pF
  • TJ, TSTG: -55°C to +150°C
Applications
  • DC/DC conversion
  • High-frequency switches
  • Synchronous rectification
  • Motor controls
  • Industrial SMPS

GSGP0R703 30 V SGT MOSFET

图片制造商零件编号描述FET 类型技术漏源电压（Vdss）可供货数量价格查看详情
MOSFET, N-CH, SINGLE, 282.00A, 3GSGP0R703MOSFET, N-CH, SINGLE, 282.00A, 3N 通道MOSFET（金属氧化物）30 V4990 - 立即发货$13.63查看详情
发布日期： 2024-07-01