Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFZ46NPBF MOSFET N-CH 55V 53A TO220AB Infineon Technologies	23,789 In Stock	1 : ¥7.39000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	53A (Tc)	10V	16.5mOhm @ 28A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1696 pF @ 25 V	-	107W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUF75339P3 MOSFET N-CH 55V 75A TO220-3 onsemi	752 In Stock	1 : ¥15.93000 Tube	UltraFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	12mOhm @ 75A, 10V	4V @ 250µA	130 nC @ 20 V	±20V	2000 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFZ44EPBF MOSFET N-CH 60V 48A TO220AB Infineon Technologies	12,673 In Stock	1 : ¥12.23000 Tube	HEXFET®	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	48A (Tc)	10V	23mOhm @ 29A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1360 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.