770mA (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMP21D0UFB4-7B MOSFET P-CH 20V 770MA 3DFN Diodes Incorporated	22,956 In Stock	1 : ¥3.04000 Cut Tape (CT) 10,000 : ¥0.57365 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	770mA (Ta)	1.8V, 4.5V	495mOhm @ 400mA, 4.5V	1V @ 250µA	1.54 nC @ 8 V	±8V	80 pF @ 10 V	-	430mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X2-DFN1006-3	3-XFDFN
DMP21D0UFB-7B MOSFET BVDSS: 8V~24V X1-DFN1006- Diodes Incorporated	20,613 In Stock 80,000 Factory	1 : ¥3.04000 Cut Tape (CT) 10,000 : ¥0.58862 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	770mA (Ta)	1.8V, 4.5V	495mOhm @ 400mA, 4.5V	1V @ 250µA	1.5 nC @ 8 V	±8V	76.5 pF @ 10 V	-	430mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	X1-DFN1006-3	3-UFDFN
PMH550UNEH MOSFET N-CH 30V 770MA DFN0606-3 Nexperia USA Inc.	31,465 In Stock	1 : ¥3.20000 Cut Tape (CT) 10,000 : ¥0.41443 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	770mA (Ta)	1.5V, 4.5V	670mOhm @ 770mA, 4.5V	950mV @ 250µA	0.4 nC @ 4 V	±8V	30.3 pF @ 15 V	-	380mW (Ta), 2.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN0606-3	3-XFDFN
DMP21D0UFB4-7R MOSFET BVDSS: 8V~24V X2-DFN1006- Diodes Incorporated	2,800 In Stock	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.66248 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	770mA (Ta)	1.8V, 4.5V	495mOhm @ 400mA, 4.5V	1V @ 250µA	1.5 nC @ 8 V	±8V	76.5 pF @ 10 V	-	430mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X2-DFN1006-3	3-XFDFN
DMP21D0UFB-7 MOSFET P-CH 20V 770MA 3DFN Diodes Incorporated	0 In Stock 141,000 Factory Check Lead Time	3,000 : ¥0.77815 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	770mA (Ta)	1.8V, 4.5V	495mOhm @ 400mA, 4.5V	1V @ 250µA	1.5 nC @ 8 V	±8V	76.5 pF @ 10 V	-	430mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X1-DFN1006-3	3-UFDFN
IRLM210ATF MOSFET N-CH 200V 770MA SOT223-4 onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	770mA (Ta)	5V	1.5Ohm @ 390mA, 5V	2V @ 250µA	9 nC @ 5 V	±20V	240 pF @ 25 V	-	1.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SI1037X-T1-GE3 MOSFET P-CH 20V 770MA SC89 Vishay Siliconix	0 In Stock	Obsolete	TrenchFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	770mA (Ta)	1.8V, 4.5V	195mOhm @ 770mA, 4.5V	450mV @ 250µA (Min)	5.5 nC @ 4.5 V	±8V	-	-	170mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-89 (SOT-563F)	SOT-563, SOT-666

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.