Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
70mOhm @ 4A, 10V360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
901 pF @ 50 V1446 pF @ 30 V
Power Dissipation (Max)
32W (Tc)78W (Tc)
Supplier Device Package
8-DFN (3.15x3.05)8-DFN (4.9x5.75)
Package / Case
8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
G30N04D3
G700P06D3
P-60V,-18A,RD(MAX)<70M@-10V,VTH-
Goford Semiconductor
1,584
In Stock
1 : ¥4.10000
Cut Tape (CT)
5,000 : ¥1.05723
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
18A (Tc)
4.5V, 10V
70mOhm @ 4A, 10V
2.5V @ 250µA
25 nC @ 10 V
±20V
1446 pF @ 30 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3.15x3.05)
8-PowerVDFN
G30N04D3
GC11N65D5
N650V, 11A,RD<360M@10V,VTH2.5V~4
Goford Semiconductor
4,964
In Stock
1 : ¥14.20000
Cut Tape (CT)
5,000 : ¥6.15461
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
360mOhm @ 5.5A, 10V
4V @ 250µA
-
±30V
901 pF @ 50 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (4.9x5.75)
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.