Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SSM3J334R,LF MOSFET P-CH 30V 4A SOT23F Toshiba Semiconductor and Storage	143,078 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.62274 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	71mOhm @ 3A, 10V	2V @ 100µA	5.9 nC @ 10 V	±20V	280 pF @ 15 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IRLML0040TRPBF MOSFET N-CH 40V 3.6A SOT23 Infineon Technologies	42,254 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.06410 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	3.6A (Ta)	4.5V, 10V	56mOhm @ 3.6A, 10V	2.5V @ 25µA	3.9 nC @ 4.5 V	±16V	266 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
SI2312B-TP N-CHANNEL MOSFET,SOT-23 Micro Commercial Co	2,516 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.77862 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6.8A (Ta)	2.5V, 4.5V	21mOhm @ 4.5A, 4.5V	900mV @ 250µA	15 nC @ 4.5 V	±10V	500 pF @ 8 V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMN3051L-7 MOSFET N-CH 30V 5.8A SOT23-3 Diodes Incorporated	14,696 In Stock 63,000 Factory	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.99221 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.8A (Ta)	4.5V, 10V	38mOhm @ 5.8A, 10V	2.2V @ 250µA	-	±20V	424 pF @ 5 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.