Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SSM3J328R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	771,003 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.69127 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
DMN3404L-7 MOSFET N-CH 30V 5.8A SOT23-3 Diodes Incorporated	9,742 In Stock 5,382,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.58071 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.8A (Ta)	3V, 10V	28mOhm @ 5.8A, 10V	2V @ 250µA	9.2 nC @ 10 V	±20V	386 pF @ 15 V	-	720mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
AO3400A MOSFET N-CH 30V 5.7A SOT23-3L Alpha & Omega Semiconductor Inc.	723,629 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.80150 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	5.7A (Ta)	2.5V, 10V	26.5mOhm @ 5.7A, 10V	1.5V @ 250µA	7 nC @ 4.5 V	±12V	630 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.