Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS123 MOSFET N-CH 100V 170MA SOT23-3 onsemi	28,452 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.51984 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200mA	4.5V, 10V	5Ohm @ 200mA, 10V	2.5V @ 250µA	1.8 nC @ 10 V	±20V	14 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PMV13XNEAR PMV13XNEA - 20 V, N-CHANNEL TREN Nexperia USA Inc.	4,641 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.83959 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	7.3A (Ta)	2.5V, 8V	15mOhm @ 7.3A, 8V	1.3V @ 250µA	15 nC @ 4.5 V	±12V	931 pF @ 10 V	-	610mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
DMP6185SE-13 MOSFET P-CH 60V 3A SOT223 Diodes Incorporated	18,119 In Stock 965,000 Factory	1 : ¥3.69000 Cut Tape (CT) 2,500 : ¥1.24605 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3A (Ta)	4.5V, 10V	150mOhm @ 2.2A, 10V	3V @ 250µA	14 nC @ 10 V	±20V	708 pF @ 30 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-223-3	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.